Synthesis of conducting graphene/Si3N4 composites by spark plasma sintering
authors Ramirez, C; Vega-Diaz, SM; Morelos-Gomez, A; Figueiredo, FM; Terrones, M; Osendi, MI; Belmonte, M; Miranzo, P
nationality International
journal CARBON
keywords MECHANICAL-PROPERTIES; RAMAN-SPECTROSCOPY; CARBON NANOTUBES; GRAPHITE OXIDE; MICROSTRUCTURE; NANOCOMPOSITE
abstract Graphene/silicon nitride (Si3N4) composites with high fraction of few layered graphene are synthesized by an in situ reduction of graphene oxide (GO) during spark plasma sintering (SPS) of the GO/Si3N4 composites. The adequate intermixing of the GO layers and the ceramic powders is achieved in alcohol under sonication followed by blade mixing. The reduction of GO occurs together with the composite densification in SPS, thus avoiding the implementation of additional reduction steps. The materials are studied by X-ray photoelectron and micro-Raman spectroscopy, revealing a high level of recovery of graphene-like domains. The SPS graphene/Si3N4 composites exhibit relatively large electrical conductivity values caused by the presence of reduced graphene oxide (similar to 1 S cm(-1) for similar to 4 vol.%, and similar to 7 S cm-1 for 7 vol.% of reduced-GO). This single-step process also prevents the formation of highly curved graphene sheets during the thermal treatment as the sheets are homogeneously embedded in the ceramic matrix. The uniform distribution of the reduced GO sheets in the composites also produces a noticeable grain refinement of the silicon nitride matrix. (C) 2013 Elsevier Ltd. All rights reserved.
publisher PERGAMON-ELSEVIER SCIENCE LTD
issn 0008-6223
year published 2013
volume 57
beginning page 425
ending page 432
digital object identifier (doi) 10.1016/j.carbon.2013.02.015
web of science category Chemistry, Physical; Materials Science, Multidisciplinary
subject category Chemistry; Materials Science
unique article identifier WOS:000319030000049
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journal impact factor 8.821
5 year journal impact factor 7.984
category normalized journal impact factor percentile 86.965
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