Tackling Polar Response in Oxygen Deficient KTaO3 Thin Films
authors Mota, DA; Romaguera-Barcelay, Y; Tkach, A; de la Cruz, JP; Vilarinho, PM; Tavares, PB; Moreira, JA; Almeida, A
nationality International
journal FERROELECTRICS
author keywords Incipient ferroelectrics; potassium tantalate; thin films; oxygen vacancies; defects
keywords STRONTIUM-TITANATE; SRTIO3; FERROELECTRICITY; DISPERSION; TANTALATE; OXIDE; RAMAN
abstract Oxygen deficient KTaO3 thin films were grown by RF magnetron sputtering on Si/SiO2/Ti/Pt substrates. Room temperature X-ray diffraction shows that they are under a compressive strain of 2.3%. Leakage current results reveal the presence of a conductive mechanism, following Poole-Frenkel formalism. The existence of a polar response below T-pol approximate to 367 degrees C was ascertained by dielectric, polarization, and depolarization current measurements. A Cole-Cole dipolar relaxation was evidenced which is associated with oxygen vacancies induced dipoles. After annealing the films in an oxygen atmosphere above T-pol, the aforementioned polar response is suppressed, due to significant oxygen vacancies reduction.
publisher TAYLOR & FRANCIS LTD
issn 0015-0193
year published 2014
volume 465
issue 1
beginning page 44
ending page 53
digital object identifier (doi) 10.1080/00150193.2014.893804
web of science category Materials Science, Multidisciplinary; Physics, Condensed Matter
subject category Materials Science; Physics
unique article identifier WOS:000335214400007
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  impact metrics
times cited (wos core): 0
journal impact factor (jcr 2016): 0.551
5 year journal impact factor (jcr 2016): 0.534
category normalized journal impact factor percentile (jcr 2016): 10.014
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