Structural and Electromagnetic Properties of Ni-Mn-Ga Thin Films Deposited on Si Substrates
authors Pereira, MJ; Lourenco, AACS; Amaral, VS
editors Niarchos, D; Hadjipanayis, G; Kalogirou, O
nationality International
journal JEMS 2013 - JOINT EUROPEAN MAGNETIC SYMPOSIA
keywords FIELD-INDUCED STRAINS
abstract Ni2MnGa thin films raise great interest due to their properties, which provide them with strong potential for technological applications. Ni2MnGa thin films were prepared by r.f. sputtering deposition on Si substrates at low temperature (400 degrees C). Film thicknesses in the range 10-120 nm were obtained. A study of the structural, magnetic and electrical properties of the films is presented. We find that the deposited films show some degree of crystallinity, with coexisting cubic and tetragonal structural phases, the first one being preponderant over the latter, particularly in the thinner films. The films possess soft magnetic properties and their coercivity is thickness dependent in the range 15-200 Oe at 300K. Electrical resistivity measurements signal the structural transition and suggest the occurrence of avalanche and return-point memory effects, in temperature cycling through the magnetic/structural transition range.
publisher E D P SCIENCES
issn 2100-014X
year published 2014
volume 75
digital object identifier (doi) 10.1051/epjconf/20147503006
web of science category Physics, Applied
subject category Physics
unique article identifier WOS:000342568300014

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