High-pressure induced phase formation in the CuGaS2-CuGaO2 chalcopyrite-delafossite system
authors Salak, AN; Zhaludkevich, AL; Ignatenko, OV; Lisenkov, AD; Yaremchenko, AA; Zheludkevich, ML; Ferreira, MGS
nationality International
journal PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
author keywords chalcopyrites; delafossite; phase transitions; sphalerites; stacking faults; X-ray diffraction
keywords SOLAR-CELLS; DIFFRACTION
abstract Phase formation under high pressure int he chalcopyrite-delafossite system has been studied at 5 GPa and 500-1000 degrees C. The parent chalcopyrite composition used in this study was slightly Cu-deficient, corresponding to the chemical formula (Cu,Ga)(0.905)GaS2. It was revealed that under high-pressure and high-temperature conditions, a mixture of the parent phases partly decomposes to form Cu2S and Ga2O3. The defect chalcopyrite (Cu,Ga)(0.905)GaS2 splits into a near-stoichiometric CuGaS2 and Cu-deficient subic (sphalerite-like) phase of the (Cu,Ga)(0.8)S composition. Such a phenomenon has been considered in terms of characteristic features of chalcopyrite and sphalerite crystal structures. Delafossite CuGaO2 at 5 GPa and 1000 degrees C was found to recrystallize entirely, which results in the disappearance of the stacking faults in its layered structure. [GRAPHICS] (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
publisher WILEY-V C H VERLAG GMBH
issn 0370-1972
year published 2014
volume 251
issue 6
beginning page 1192
ending page 1196
digital object identifier (doi) 10.1002/pssb.201451013
web of science category Physics, Condensed Matter
subject category Physics
unique article identifier WOS:000337608600009
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