The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy
authors Tsui, HCL; Goff, LE; Barradas, NP; Alves, E; Pereira, S; Beere, HE; Farrer, I; Nicoll, CA; Ritchie, DA; Moram, MA
nationality International
journal PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
author keywords metal-rich growth; molecular beam epitaxy; scandium gallium nitrides; thin films; transmission electron microscopy
keywords SCANDIUM NITRIDE FILMS; BAND-GAP; STRUCTURAL-PROPERTIES; SPECTRA; LAYERS
abstract Epitaxial ScxGa1-xN films with 0 <= x <= 0.50 were grown using molecular beam epitaxy under metal-rich conditions. The ScxGa1-xN growth rate increased with increasing Sc flux despite the use of metal-rich growth conditions, which is attributed to the catalytic decomposition of N-2 induced by the presence of Sc. Microstructural analysis showed that phase-pure wurtzite ScxGa1-xN was achieved up to x = 0.26, which is significantly higher than that previously reported for nitrogen-rich conditions, indicating that the use of metal-rich conditions can help to stabilise wurtzite phase ScxGa1-xN. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
publisher WILEY-V C H VERLAG GMBH
issn 1862-6300
year published 2015
volume 212
issue 12
beginning page 2837
ending page 2842
digital object identifier (doi) 10.1002/pssa.201532292
web of science category Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
subject category Materials Science; Physics
unique article identifier WOS:000366589900027
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