Band gaps of wurtzite ScxGa1-xN alloys
authors Tsui, HCL; Goff, LE; Rhode, SK; Pereira, S; Beere, HE; Farrer, I; Nicoll, CA; Ritchie, DA; Moram, MA
nationality International
journal APPLIED PHYSICS LETTERS
keywords LIGHT-EMITTING-DIODES; ELECTRONIC-PROPERTIES; CUBIC GAN; SCGAN; FILMS; SCN; MICROSTRUCTURE; SPECTRA; SCAS
abstract Optical transmittance measurements on epitaxial, phase-pure, wurtzite-structure ScxGa1-xN films with 0 <= x <= 0.26 showed that their direct optical band gaps increased from 3.33 eV to 3.89 eV with increasing x, in agreement with theory. These films contained I-1- and I-2-type stacking faults. However, the direct optical band gaps decreased from 3.37 eV to 3.26 eV for ScxGa1-xN films, which additionally contained nanoscale lamellar inclusions of the zinc-blende phase, as revealed by aberration-corrected scanning transmission electron microscopy. Therefore, we conclude that the apparent reduction in ScxGa1-xN band gaps with increasing x is an artefact resulting from the presence of nanoscale zinc-blende inclusions. (C) 2015 AIP Publishing LLC.
publisher AMER INST PHYSICS
issn Mar-51
year published 2015
volume 106
issue 13
digital object identifier (doi) 10.1063/1.4916679
web of science category Physics, Applied
subject category Physics
unique article identifier WOS:000352310700025
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