Defect concentration in nitrogen-doped graphene grown on Cu substrate: A thickness effect
authors Sharma, DK; Fateixa, S; Hortiguela, MJ; Vidyasagar, R; Otero-Irurueta, G; Nogueira, HIS; Singh, MK; Kholkin, A
nationality International
journal PHYSICA B-CONDENSED MATTER
author keywords Graphene; CVD; High Resolution-X-ray Photoelectron Spectroscopy (HR-XPS); Raman; Defects; Nitrogen-doping
keywords CHEMICAL-VAPOR-DEPOSITION; EPITAXIAL GRAPHENE; CARBON NANOTUBES; GRAPHITE; FILMS; SURFACES; DIAMOND
abstract Tuning the band-gap of graphene is a current need for real device applications. Copper (Cu) as a substrate plays a crucial role in graphene deposition. Here we report the fabrication of in-situ nitrogen (N) doped graphene via chemical vapor deposition (CVD) technique and the effect of Cu substrate thickness on the growth mechanism. The ratio of intensities of G and D peaks was used to evaluate the defect concentration based on local activation model associated with the distortion of the crystal lattice due to incorporation of nitrogen atoms into graphene lattice. The results suggest that Cu substrate of 20 mu m in thickness exhibits higher defect density (1.86x10(12) cm(-2)) as compared to both 10 and 25 mu m thick substrates (1.23x10(12) cm(-2) and 3.09x10(11) cm(-2), respectively). Furthermore, High Resolution -X-ray Photoelectron Spectroscopy (HR-XPS) precisely affirms similar to 0.4 at% of nitrogen intercalations in graphene. Our results show that the substitutional type of nitrogen doping dominates over the pyridinic configuration. In addition, X-ray diffraction (XRD) shows all the XRD peaks associated with carbon. However, the peak at similar to 24 degrees is suppressed by the substrate peaks (Cu). These results suggest that nitrogen atoms can be efficiently incorporated into the graphene using thinner copper substrates, rather than the standard 25 mu m ones. This is important for tailoring the properties by graphene required for microelectronic applications.
publisher ELSEVIER SCIENCE BV
issn 0921-4526
year published 2017
volume 513
beginning page 62
ending page 68
digital object identifier (doi) 10.1016/j.physb.2017.03.004
web of science category Physics, Condensed Matter
subject category Physics
unique article identifier WOS:000398059900010
  ciceco authors
  impact metrics
times cited (wos core): 0
journal impact factor (jcr 2016): 1.386
5 year journal impact factor (jcr 2016): 1.352
category normalized journal impact factor percentile (jcr 2016): 32.090
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