Composition measurement of epitaxial ScxGa1-xN films
authors Tsui, HCL; Goff, LE; Barradas, NP; Alves, E; Pereira, S; Palgrave, RG; Davies, RJ; Beere, HE; Farrer, I; Ritchie, DA; Moram, MA
nationality International
journal SEMICONDUCTOR SCIENCE AND TECHNOLOGY
author keywords ScGaN; Rutherford backscattering; x-ray photoelectron spectroscopy; composition measurement
keywords SCANDIUM NITRIDE FILMS; THIN-FILMS; BAND-GAP; INGAN EPILAYERS; GROWTH; SCGAN; MICROSTRUCTURE; SURFACE; PLASMA; LAYERS
abstract Four different methods for measuring the compositions of epitaxial ScxGa1-xN films were assessed and compared to determine which was the most reliable and accurate. The compositions of epitaxial ScxGa1-xN films with 0 <= x <= 0.26 were measured directly using Rutherford backscattering (RBS) and x-ray photoelectron spectroscopy (XPS), and indirectly using c lattice parameter measurements from x-ray diffraction and c/a ratio measurements from electron diffraction patterns. RBS measurements were taken as a standard reference. XPS was found to underestimate the Sc content, whereas c lattice parameter and c/a ratio were not reliable for composition determination due to the unknown degree of strain relaxation in the film. However, the Sc flux used during growth was found to relate linearly with x and could be used to estimate the Sc content.
publisher IOP PUBLISHING LTD
issn 0268-1242
year published 2016
volume 31
issue 6
digital object identifier (doi) 10.1088/0268-1242/31/6/064002
web of science category Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter
subject category Engineering; Materials Science; Physics
unique article identifier WOS:000378201000005
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