Nanoscale polarization relaxation and piezoelectric properties of SBN thin films
authors Melo, M; Araujo, EB; Ivanov, M; Shur, VY; Kholkin, AL
nationality International
journal 2016 JOINT IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, EUROPEAN CONFERENCE ON APPLICATION OF POLAR DIELECTRICS, AND PIEZOELECTRIC FORCE MICROSCOPY WORKSHOP (ISAF/ECAPD/PFM)
author keywords SBN films; piezoresponse; polarization relaxation
keywords STRONTIUM BARIUM NIOBATE; CAPACITORS
abstract Randomly oriented Sr0.75Ba0.25Nb2O6 thin films have been deposited on Pt(111)/Ti/SiO2/Si substrates using a polymeric chemical route to study their peculiar nanopolar structures and local ferroelectric properties using piezoresponse force microscopy (PFM) technique. PFM images reveals grains with contrast among fully white and fully black, a clear indication of non-zero polarization in the SBN films far above T-m similar to 221 K. Asymmetries observed in local hysteresis loops recorded at different grains suggest an imprint effect in the studied films due to an internal build-in electric field. Some grains show asymmetric hysteresis loops while other grains show symmetric hysteresis loops. The origin of the imprint effect observed in the SBN films is discussed in terms of complex defects associated to oxygen vacancies. The experimental relaxation curves were fitted using the Kohlrausch-Williams-Watts function. The time constant tau increases from 404 to 977 ms as the magnitude voltage increases.
publisher IEEE
isbn 978-1-5090-1871-0
year published 2016
web of science category Engineering, Electrical & Electronic; Physics, Applied
subject category Engineering; Physics
unique article identifier WOS:000391250700024
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