Development of ferroelectric domains and topological defects in vacancy doped ceramics of h-LuMnO3
authors A. Baghizadeh, J. M. Vieira, P. Mirzadeh Vaghefi, M.-G. Willinger, and V. S. Amaral
nationality International
journal Journal of Applied Physics
abstract Self-doping of the h-LuMnxO3▒δ (0.92 ≤ x ≤ 1.12) phase and changes in the sintering time are applied to investigate the formation and annihilation of antiphase ferroelectric (FE) domains in bulk ceramics. The increase in the annealing time in sintering results in growth of FE domains, which depends on the type of vacancy, 6-fold vortices with dimensions of the order of 20 μm being observed. Interference of planar defects of the lattice with the growth of topological defects shows breaking of 6-fold symmetry in the self-doped ceramics. The role of grain boundaries in the development of topological defects has been studied. Dominance of the atypical FE domain network in very defective h-LuMnxO3▒δ lattices saturated with Mn vacancies (x < 1) was also identified in the current study. After a long annealing time, scattered closed-loops of nano-dimensions are often observed isolated inside large FE domains with opposite polarization. Restoring of the polarization after alternative poling with opposite electrical fields is observed in FE domains. Stress/strain in the lattice driven by either planar defects or chemical inhomogeneity results in FE polarization switching on the nanoscale and further formation of nano-vortices, with detailed investigation being carried out by electron microscopy. Pinning of FE domains to planar defects is explored in the present microscopy analysis, and nano-scale observation of lattices is used to explain features of the ferroelectricity revealed in Piezo Force Microscopy images of the ceramics.
year published 2017
volume 122
beginning page 044102-1
ending page 044102-10
digital object identifier (doi) 10.1063/1.4996349
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  impact metrics
journal impact factor (jcr 2016): 2.068
5 year journal impact factor (jcr 2016): 2.103
category normalized journal impact factor percentile (jcr 2016): 60.204
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