Deposition parameters and annealing key role in setting structural and polar properties of Bi0.9La0.1Fe0.9Mn0.1O3 thin films
authors Carvalho, TT; Figueiras, FG; Pereira, SMS; Fernandes, JRA; de la Cruz, JP; Tavares, PB; Almeida, A; Moreira, JA
nationality International
journal JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
keywords BISMUTH FERRITE; BIFEO3; LA; TEMPERATURE; SUBSTRATE; CERAMICS
abstract The present work explores the processing conditions of Bi0.9La0.1Fe0.9Mn0.1O3 (BLFM) thin films, grown by RF sputtering on platinum metalized silicon substrates, and its impact on the structural and ferroelectric properties. The optimized processing conditions were found to be a combination of deposition of an amorphous film at low substrate temperature (ae550 A degrees C), followed by a thermal treatment at 550 A degrees C during 30 min, in order to prevent bismuth volatilization. This procedure leads to the formation of high-quality monophasic crystalline films with well-defined piezoelectric response exhibiting micron size domains.
publisher SPRINGER
issn 0957-4522
isbn 1573-482X
year published 2017
volume 28
issue 17
beginning page 12690
ending page 12697
digital object identifier (doi) 10.1007/s10854-017-7094-0
web of science category Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
subject category Engineering; Materials Science; Physics
unique article identifier WOS:000407946700038

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