Dielectric relaxation and charged domain walls in (K,Na)NbO3-based ferroelectric ceramics
authors Esin, AA; Alikin, DO; Turygin, AP; Abramov, AS; Hrescak, J; Walker, J; Rojac, T; Bencan, A; Malic, B; Kholkin, AL; Shur, VY
nationality International
journal JOURNAL OF APPLIED PHYSICS
keywords LEAD-FREE PIEZOCERAMICS; THIN-FILMS; NIOBATE; PERMITTIVITY; CONSTANT; BATIO3; MODEL
abstract The influence of domain walls on the macroscopic properties of ferroelectric materials is a well known phenomenon. Commonly, such "extrinsic" contributions to dielectric permittivity are discussed in terms of domain wall displacements under external electric field. In this work, we report on a possible contribution of charged domain walls to low frequency (10-10(6) Hz) dielectric permittivity in K1-xNaxNbO3 ferroelectric ceramics. It is shown that the effective dielectric response increases with increasing domain wall density. The effect has been attributed to the Maxwell-Wagner-Sillars relaxation. The obtained results may open up possibilities for domain wall engineering in various ferroelectric materials.
publisher AMER INST PHYSICS
issn 0021-8979
isbn 1089-7550
year published 2017
volume 121
issue 7
digital object identifier (doi) 10.1063/1.4975341
web of science category Physics, Applied
subject category Physics
unique article identifier WOS:000395283700010
  ciceco authors
  impact metrics
journal analysis (jcr 2019):
journal impact factor 2.286
5 year journal impact factor 2.138
category normalized journal impact factor percentile 54.87
dimensions (citation analysis):
altmetrics (social interaction):



 


Sponsors

1suponsers_list_ciceco.jpg