Extrinsic stress induced defects in CVD diamond
authors Vila, M; Lopes, AB; Almeida, A; Fernandes, AJS; Silva, RF
nationality International
journal DIAMOND AND RELATED MATERIALS
author keywords CVD; polycrystalline diamond; defects; extrinsic stress
keywords FILMS; DISLOCATIONS; QUALITY; SILICON; ORIGIN
abstract A correlation between the generation of extrinsic defects and the stress produced by the thermal expansion coefficient mismatch between CVD polycrystalline diamond films and the substrate material is established. For this, different ceramic substrate compositions with distinct thermal expansion coefficients were chosen in order to provoke diverse extrinsic stress generation. Diamond films were grown by Microwave Plasma Chemical Vapour Deposition (MPCVD) and all the parameters that cause intrinsic stress, as temperature, gas composition, pressure and deposition time, have been fixed to avoid their effect. It was found that defect-free diamond grains are associated with low stressed coatings, while the highly stressed ones contain multiple narrow twins. (C) 2007 Elsevier B.V. All rights reserved.
publisher ELSEVIER SCIENCE SA
issn 0925-9635
year published 2008
volume 17
issue 2
beginning page 190
ending page 193
digital object identifier (doi) 10.1016/j.diamond.2007.12.002
web of science category Materials Science, Multidisciplinary
subject category Materials Science
unique article identifier WOS:000253520000018
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  impact metrics
journal analysis (jcr 2019):
journal impact factor 2.65
5 year journal impact factor 2.699
category normalized journal impact factor percentile 58.345
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