High resolution study of the strong diamond/silicon nitride interface
authors Almeida, FA; Oliveira, FJ; Silva, RF; Baptista, DL; Peripolli, SB; Achete, CA
nationality International
journal APPLIED PHYSICS LETTERS
keywords TRANSMISSION ELECTRON-MICROSCOPY; CHEMICAL-VAPOR-DEPOSITION; SILICON-NITRIDE; DIAMOND FILMS; CVD DIAMOND; GROWTH; NUCLEATION; TEM; MICROSTRUCTURE; CARBON
abstract Silicon nitride (Si(3)N(4)) is known to offer the required adhesion to chemically vapor deposited diamond coatings for demanding mechanical solicitations but the nature of their strong interface is not well know. Focused ion beam preparation preserved such thin layer for high resolution transmission electron microscopy. Contrarily to earlier suppositions, SiC interlinking particles were not found. Instead, the interface shows diamondlike carbon interlayers (approximately 3nm in thickness) intercalated with regions of directly-grown nanomicrometric and submicrometric-diamond crystals. A grain-to-grain epitaxial relationship of the type < 111 > Dia vertical bar vertical bar < 010 > Si(3)N(4) and {111}Dia vertical bar vertical bar{(1) over bar 20}Si(3)N(4) is observed, concomitant with a 7:1 match arrangement, which assists on the interface strength. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3584019]
publisher AMER INST PHYSICS
issn 0003-6951
year published 2011
volume 98
issue 17
digital object identifier (doi) 10.1063/1.3584019
web of science category Physics, Applied
subject category Physics
unique article identifier WOS:000290046100024
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  impact metrics
times cited (wos core): 6
journal impact factor (jcr 2016): 3.411
5 year journal impact factor (jcr 2016): 3.341
category normalized journal impact factor percentile (jcr 2016): 81.293
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