Metallic oxygen barrier diffusion applied to high-kappa deposition
authors Rauwei, E; Rauwel, P; Ducroquet, F; Matko, I; Lourenco, AC
nationality International
journal JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
keywords GATE DIELECTRICS; SILICON; OXIDES; INTERFACE; HFO2; FILM; SI
abstract A thin metallic interlayer was deposited on Si and Si/SiO(2) substrate prior to the sputtering of HfO(2) films. The metallic interlayer, in fact, acts as an oxygen barrier during the HfO(2) deposition, preventing the formation of a low-kappa layer at the high-kappa/Si interface. After annealing, the metal diffuses in the HfO(2) film. When the thickness of the metallic interlayer is properly adjusted, with respect to the thickness of the HfO(2) film, the interfacial layer at HfO(2)/Si interface can almost be suppressed, thus improving the electrical properties of the gate stack. c 2011 American Vacuum Society. [DOI: 10.1116/1.3534019]
publisher A V S AMER INST PHYSICS
issn 1071-1023
year published 2011
volume 29
issue 1
digital object identifier (doi) 10.1116/1.3534019
web of science category Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
subject category Engineering; Science & Technology - Other Topics; Physics
unique article identifier WOS:000286679400047
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journal analysis (jcr 2017):
journal impact factor 1.314
5 year journal impact factor 1.283
category normalized journal impact factor percentile 26.018
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