Glass-Glass Laser-Assisted Glass Frit Bonding
authors Cruz, R; Ranita, JAD; Macaira, J; Ribeiro, F; da Silva, AMB; Oliveira, JM; Fernandes, MHFV; Ribeiro, HA; Mendes, JG; Mendes, A
nationality International
journal IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY
author keywords Glass substrate; laser joining; lead-free glass frit
keywords WAFER LEVEL ENCAPSULATION; SENSITIZED SOLAR-CELLS; MEMS
abstract A novel sealing method is proposed for encapsulating devices comprised of glass substrates. This sealing method is based on applying a glass frit paste cord onto the substrate and then using a laser beam to locally supply the necessary energy to allow the formation of a hermetic bonding layer. A detailed description of the laser bonding technique, the necessary equipment and method, and a preliminary study is carried out. The need to apply mechanical pressure during the bonding step is averted, thus facilitating the manufacturing process. The glass bonding cord obtained by the laser-assisted process was found to have an excellent contact with both substrates and no gas inclusions or voids were detected, indicating that an effective sealing was achieved. Preliminary hermeticity tests of the laser-bonded cells yielded encouraging results. The developed laser-assisted glass frit bonding process is a promising technique for obtaining hermetic sealing of photoelectronic and electrochemical devices, as it allows temperature-sensitive materials to be used inside them.
publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
issn 2156-3950
year published 2012
volume 2
issue 12
beginning page 1949
ending page 1956
digital object identifier (doi) 10.1109/TCPMT.2012.2212195
web of science category Engineering, Manufacturing; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary
subject category Engineering; Materials Science
unique article identifier WOS:000312459800002
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journal analysis (jcr 2017):
journal impact factor 1.660
5 year journal impact factor 1.662
category normalized journal impact factor percentile 40.307
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