Oxygen Diffusion Barrier Applied To High-k Thin Films Deposition
authors Rauwel, E; Rauwel, P; Ducroquet, F; Matko, I; Lourenco, A
editors Kar, S; VanElshocht, S; Misra, D; Houssa, M; Landheer, D; Kita, K
nationality International
journal PHYSICS AND TECHNOLOGY OF HIGH-K MATERIALS 8
keywords GATE DIELECTRICS; OXIDES; SILICON; SI
abstract The effect of a thin metallic interlayer deposited on Si substrate prior the sputtering of HfO2 films was investigated. It was shown that the metallic interlayer acts as an oxygen barrier during the HfO2 deposition. After annealing, the metal diffuses into the HfO2 film and prevents the formation of a low-kappa layer at the high-kappa/Si interface. However, in order to fully investigate the improvement in the interfacial and electrical properties, the thickness of the metallic interlayer needs to be adapted to the thickness of the HfO2 film.
publisher ELECTROCHEMICAL SOC INC
issn 1938-5862
isbn 978-1-60768-172-4
year published 2010
volume 33
issue 3
beginning page 497
ending page 506
digital object identifier (doi) 10.1149/1.3481639
web of science category Electrochemistry; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary
subject category Electrochemistry; Engineering; Materials Science
unique article identifier WOS:000313332400054
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