Total reflectance and Raman studies in AlyInxGa1-x-yN epitaxial layers
authors Bola, AM; Correia, MR; Pereira, S; Gonzalez, JC; Lorenz, K; Alves, E; Barradas, N
editors Briot, O
nationality International
journal PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 1
keywords QUATERNARY; INXALYGA1-X-YN; WAVELENGTH; ALLOYS; GAP
abstract This study comprises a set of AlyInxGa1-x-yN thin films grown on GaN/sapphire substrate by MOVPE, with In content between 2 and 8% and Al between 21 and 38%. The thin films were optically characterized by means of UV-Visible total reflectance and mu-UV-Raman scattering, performed at room temperature. It is shown that the [Al]/[In] ration influences strongly the Reflectance spectra and a good correlation has been found between the reflectance maximum located at higher energy and the band gap predicted by Vegard's law for quaternary alloys. The Raman results indicate that the LO-AlGaN-like vibration mode is the dominated vibration in good agreement with the oscillator strength values obtained theoretically [12] for this alloys. It is shown how the influence of competing effects, such as composition and strain influences the frequency observed for the LO-AlGaN-like mode (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
publisher WILEY-V C H VERLAG GMBH
issn 1862-6351
year published 2010
volume 7
issue 1
beginning page 56
ending page 59
digital object identifier (doi) 10.1002/pssc.200982632
web of science category Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
subject category Science & Technology - Other Topics; Materials Science; Physics
unique article identifier WOS:000280141000013

Apoio

1suponsers_list_ciceco.jpg