Electrostatic mechanism of strong enhancement of light emitted by semiconductor quantum wells
authors Llopis, A; Lin, J; Pereira, SMS; Trinidade, T; Martins, MA; Watson, IM; Krokhin, AA; Neogi, A
nationality International
journal PHYSICAL REVIEW B
keywords EMISSION; SURFACE; PHOTOLUMINESCENCE; NANOCAVITIES; PLASMONICS
abstract Currently, it is understood that the carrier recombination rate in semiconductors can be modified by metals due to pure electrodynamic interactions through surface plasmons. We propose here an electrostatic mechanism for carrier-metallic nanoparticle interaction comparable in effect to plasmonic interactions. Arising from Coulomb attraction of electrons and holes to their images in metal, this mechanism produces large carrier concentrations near metallic nanoparticles. Increased concentration results in increased quantum efficiency and enhances the rate of e-h recombination. This manifests as emission enhancement in InGaN quantum wells radiating in the near-UV region. The proposed fundamental mechanism provides a new perspective for improving the efficiency of broadband light emitters.
publisher AMER PHYSICAL SOC
issn 1098-0121
year published 2013
volume 87
issue 20
digital object identifier (doi) 10.1103/PhysRevB.87.201304
web of science category Physics, Condensed Matter
subject category Physics
unique article identifier WOS:000319730100001
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journal analysis (jcr 2017):
journal impact factor 3.813
5 year journal impact factor 3.704
category normalized journal impact factor percentile 73.881
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