Minority anion substitution by Ni in ZnO

authors	Pereira, LMC; Wahl, U; Correia, JG; Amorim, LM; Silva, DJ; Bosne, E; Decoster, S; da Silva, MR; Temst, K; Vantomme, A
nationality	International
journal	APPLIED PHYSICS LETTERS
keywords	MAGNETIC SEMICONDUCTORS; EMISSION; DETECTORS
abstract	We report on the lattice location of implanted Ni in ZnO using the beta(-) emission channeling technique. In addition to the majority substituting for the cation (Zn), a significant fraction of the Ni atoms occupy anion (O) sites. Since Ni is chemically more similar to Zn than it is to O, the observed O substitution is rather puzzling. We discuss these findings with respect to the general understanding of lattice location of dopants in compound semiconductors. In particular, we discuss potential implications on the magnetic behavior of transition metal doped dilute magnetic semiconductors. (C) 2013 AIP Publishing LLC.
publisher	AMER INST PHYSICS
issn	0003-6951
year published	2013
volume	103
issue	9
digital object identifier (doi)	10.1063/1.4820254
web of science category	Physics, Applied
subject category	Physics
unique article identifier	WOS:000323846900021