Minority anion substitution by Ni in ZnO
authors Pereira, LMC; Wahl, U; Correia, JG; Amorim, LM; Silva, DJ; Bosne, E; Decoster, S; da Silva, MR; Temst, K; Vantomme, A
nationality International
journal APPLIED PHYSICS LETTERS
keywords MAGNETIC SEMICONDUCTORS; EMISSION; DETECTORS
abstract We report on the lattice location of implanted Ni in ZnO using the beta(-) emission channeling technique. In addition to the majority substituting for the cation (Zn), a significant fraction of the Ni atoms occupy anion (O) sites. Since Ni is chemically more similar to Zn than it is to O, the observed O substitution is rather puzzling. We discuss these findings with respect to the general understanding of lattice location of dopants in compound semiconductors. In particular, we discuss potential implications on the magnetic behavior of transition metal doped dilute magnetic semiconductors. (C) 2013 AIP Publishing LLC.
publisher AMER INST PHYSICS
issn 0003-6951
year published 2013
volume 103
issue 9
digital object identifier (doi) 10.1063/1.4820254
web of science category Physics, Applied
subject category Physics
unique article identifier WOS:000323846900021
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journal analysis (jcr 2019):
journal impact factor 3.597
5 year journal impact factor 3.4
category normalized journal impact factor percentile 76.299
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