High Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors
authors Molinari, AS; Alves, H; Chen, Z; Facchetti, A; Morpurgo, AF
journal JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
keywords FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; N-TYPE; HIGH-PERFORMANCE; ORGANIC SEMICONDUCTORS; FUNCTIONALIZED ACENES; GATE DIELECTRICS; AIR; DERIVATIVES; TRANSPORT
abstract Single-crystal field-effect transistors (FETs) based on a fluorocarbon-substituted dicyanoperylene-3,4:9, 10-bis(dicarboximide) [PDIF-CN2] were fabricated by lamination of the semiconductor crystal on Si-SiO2/PMMA-Au gate-dielectric-contact substrates. These devices were characterized both in vacuum and in the air, and they exhibit electron mobilities of ca. 6-3 and ca. 3-1 cm(2) V-1 s(-1), respectively, I-on:I-off > 10(3), and near-zero threshold voltage.
publisher AMER CHEMICAL SOC
issn 0002-7863
year published 2009
volume 131
issue 7
beginning page 2462
ending page +
digital object identifier (doi) 10.1021/ja809848y
web of science category Chemistry, Multidisciplinary
subject category Chemistry
unique article identifier WOS:000263576100022
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journal impact factor 14.612
5 year journal impact factor 14.549
category normalized journal impact factor percentile 92.938
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