Quantitative analysis of density-dependent transport in tetramethyltetraselenafulvalene single-crystal transistors: Intrinsic properties and trapping
authors Xie, H; Alves, H; Morpurgo, AF
journal PHYSICAL REVIEW B
author keywords carrier density; organic field effect transistors; organic semiconductors; semiconductor device models
keywords FIELD-EFFECT TRANSISTORS; ORGANIC TRANSISTORS; CHARGE-TRANSPORT; ELECTRONIC TRANSPORT; HOLE MOBILITY; PENTACENE; SEMICONDUCTORS; TETRACENE; DIELECTRICS
abstract We perform a combined experimental and theoretical study of tetramethyltetraselenafulvalene (TMTSF) single-crystal field-effect transistors, whose electrical characteristics exhibit clear signatures of the intrinsic transport properties of the material. We present a simple, well-defined model based on physical parameters and we successfully reproduce quantitatively the device properties as a function of temperature and carrier density. The analysis allows its internal consistency to be checked, and enables the reliable extraction of the density and characteristic energy of shallow and deep traps in the material. Our findings provide indications as to the origin of shallow traps in TMTSF transistors.
publisher AMER PHYSICAL SOC
issn 1098-0121
year published 2009
volume 80
issue 24
digital object identifier (doi) 10.1103/PhysRevB.80.245305
web of science category Physics, Condensed Matter
subject category Physics
unique article identifier WOS:000273229200084
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journal analysis (jcr 2019):
journal impact factor 3.575
5 year journal impact factor 3.511
category normalized journal impact factor percentile 70.187
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