Structure and electronic conductivity of Bi2-xLaxV0.9Cu0.1O5.5-delta
authors Yaremchenko, AA; Avdeev, M; Kharton, VV; Kovalevsky, AV; Naumovich, EN; Marques, FMB
nationality International
journal MATERIALS CHEMISTRY AND PHYSICS
author keywords BICUVOX.10; lanthanum doping; structure refinement; transference number; electronic conductivity
keywords VANADATE SOLID ELECTROLYTES; DEFECT STRUCTURE; ION CONDUCTORS; BIMEVOX; BISMUTH; OXIDES; EPR; LA
abstract The structure refinement of La-doped Bi2V0.90Cu0.10O5.5-delta (BICUVOX.10) showed that the maximum solid solubility of lanthanum cations in the bismuth sublattice corresponds to approximately 2-2.5% of the Bi site concentration. Doping with lanthanum leads to a decrease in both oxygen ionic and electronic conductivities of Bi2-xLaxV0.9Cu0.1O5.5-delta (X = 0-0.20). The oxygen ion transference numbers determined by the modified e.m.f. method under the oxygen pressure gradient of 101/21 kPa at 820-970 K vary in the range 0.962-0.999, increasing with the decrease in temperature. Reduction of the oxygen partial pressure down to 10 kPa leads to a drastic increase of the n-type electronic conductivity and then to phase decomposition. In contrast to the instability of Bi2V0.90Cu0.10O5.5-delta at intermediate oxygen partial pressures, annealing at high oxygen pressures (up to 12 MPa) results in neither phase decomposition nor considerable increase of the p-type electronic transport. (C) 2002 Elsevier Science B.V. All rights reserved.
publisher ELSEVIER SCIENCE SA
issn 0254-0584
year published 2003
volume 77
issue 2
beginning page 552
ending page 558
digital object identifier (doi) 10.1016/S0254-0584(02)00121-9
web of science category Materials Science, Multidisciplinary
subject category Materials Science
unique article identifier WOS:000178497600039
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