High-quality PbZr0.52Ti0.48O3 films prepared by modified sol-gel route at low temperature
authors Perez, J; Vilarinho, PM; Kholkin, AL
nationality International
journal THIN SOLID FILMS
author keywords crystallization; dielectric properties; growth mechanism
keywords THIN-FILMS; FABRICATION; ELECTRODES
abstract A modification of the methoxyethanol-based sol-gel route used for depositing high-quality PbZr0.52Ti0.48O3 (PZT) films at low temperature is reported. The modification consists of multiple distillations of Pb precursor after dissolving in 2-methoxyethanol and increasing the pyrolisis temperature after individual layer deposition. In addition, a large amount of PbO excess (20%) is used to maintain the stoichiometry of PZT films. As a result, the films processed at 500 degreesC possess a dielectric permittivity of similar to 1900, a remanent polarization of similar to 30 muC/cm(2) and a coercive field of similar to 60 kV/cm. The crystallization mechanism is discussed along with the possible applications of such films in microelectromechanical systems. (C) 2003 Elsevier B.V. All rights reserved.
publisher ELSEVIER SCIENCE SA
issn 0040-6090
year published 2004
volume 449
issue 1-2
beginning page 20
ending page 24
digital object identifier (doi) 10.1016/j.tsf.2003.10.104
web of science category Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter
subject category Materials Science; Physics
unique article identifier WOS:000189087100004
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journal impact factor 1.939
5 year journal impact factor 1.796
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