|
authors |
Lorenz, K; Franco, N; Alves, E; Pereira, S; Watson, IM; Martin, RW; O'Donnell, KP |
|
nationality |
International |
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journal |
JOURNAL OF CRYSTAL GROWTH |
|
author keywords |
characterization; stresses; metal organic vapour phase epitaxy; nitrides; semiconducting III-V materials; semiconducting ternary compounds |
|
keywords |
RUTHERFORD BACKSCATTERING; CARRIER-DENSITY; X-RAY; NITRIDE; MOBILITY |
|
abstract |
Epitaxial layers of wurtzite-phase Al1-xInxN, similar to 120 nm thick with (0 0 0 1) orientation, were grown by metal organic chemical vapour deposition on GaN buffer layers at setpoint temperatures between 760 and 840 degrees C. For growth temperatures >= 800 degrees C, the AlInN layers grew with uniform composition, pseudomorphic with the underlying GaN buffer layer. In the temperature range studied, the InN fractions are a linear function of the setpoint temperature and straddle the near-lattice-match composition around Al0.83In0.17N. Lowering the growth temperature to 760 degrees C caused a compositional grading, a marked change in surface morphology, and a reduction in AlInN crystal quality. The resulting AlInN layer consists of a compressively strained interfacial layer with a composition of Al0.76In0.24N and a mostly relaxed near-surface layer with a composition of A10.811no.19N. Atomic force microscopy suggests that a transition to a three-dimensional growth mode accompanies the structural relaxation and change in composition. (C) 2008 Elsevier B.V. All rights reserved. |
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publisher |
ELSEVIER SCIENCE BV |
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issn |
0022-0248 |
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year published |
2008 |
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volume |
310 |
|
issue |
18 |
|
beginning page |
4058 |
|
ending page |
4064 |
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digital object identifier (doi) |
10.1016/j.jcrysgro.2008.07.006 |
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web of science category |
Crystallography; Materials Science, Multidisciplinary; Physics, Applied |
|
subject category |
Crystallography; Materials Science; Physics |
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unique article identifier |
WOS:000259791100007
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