InGaN epilayer characterization by microfocused x-ray reciprocal space mapping
authors Kachkanov, V; Dolbnya, IP; O'Donnell, KP; Martin, RW; Edwards, PR; Pereira, S
nationality International
journal APPLIED PHYSICS LETTERS
keywords GAN; DIFFRACTION; HETEROSTRUCTURE; DIFFRACTOMETRY
abstract We report the use of microfocused three-dimensional x-ray reciprocal space mapping to study InGaN epilayers with average InN content similar to 20%-22%. Analysis of the full volume of reciprocal space, while probing samples on the microscale with a focused x-ray beam, allowed us to gain valuable information about the nanostructure of InN-rich InGaN epilayers. It is found that "seed" InGaN mosaic nanocrystallites are twisted with respect to the ensemble average and strain-free. The initial stages of InGaN-on-GaN epitaxial growth, therefore, conform to the Volmer-Weber growth mechanism with "seeds" nucleated on strain fields generated by the a-type edge dislocations. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3658619]
publisher AMER INST PHYSICS
issn 0003-6951
year published 2011
volume 99
issue 18
digital object identifier (doi) 10.1063/1.3658619
web of science category Physics, Applied
subject category Physics
unique article identifier WOS:000296659400040
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journal impact factor 3.495
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