Carboxylic Acids as Oxygen Supplying Agents for Atomic Layer Deposition of High-kappa Thin Films
authors Rauwel, E; Ducroquet, F; Rauwel, P; Willinger, MG; Matko, I; Kiselev, D; Pinna, N
editors Londergan, A; Bent, SF; DeGendt, S; Elam, JW; Kang, SB; VanderStraten, O
nationality International
journal ATOMIC LAYER DEPOSITION APPLICATIONS 4
keywords DIOXIDE FILMS; HAFNIUM OXIDE; PRECURSORS; ROUTES; HFO2
abstract Atomic layer deposition (ALD) is known to be a good candidate for the growth of high-kappa thin films for microelectronic applications. Contrary to standard methods, in this work no common oxygen source such as water, oxygen or ozone is used. Titania and hafnia thin films were deposited on Si(100) and Si(111) substrates using metal alkoxides and carboxylic acids as oxygen source at temperatures ranging from 50 to 350 degrees C. The as-deposited films demonstrate good permittivity (kappa) and low leakage current densities due to their purity and amorphous character. Nevertheless, post deposition annealing under nitrogen leads to a densification of the films and further improves the electrical properties. An interesting aspect of the present approach is that the applied chemical approach which was adapted from non-aqueous sol-gel chemistry has the potential to grow oxides on silicon whilst minimizing the formation of a low-kappa interfacial layer.
publisher ELECTROCHEMICAL SOCIETY INC
issn 1938-5862
isbn 978-1-56677-650-9
year published 2008
volume 16
issue 4
beginning page 279
ending page 289
digital object identifier (doi) 10.1149/1.2980003
web of science category Electrochemistry; Materials Science, Coatings & Films
subject category Electrochemistry; Materials Science
unique article identifier WOS:000272018400029
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