Dielectric relaxation and charged domain walls in (K,Na)NbO3-based ferroelectric ceramics

authors	Esin, AA; Alikin, DO; Turygin, AP; Abramov, AS; Hrescak, J; Walker, J; Rojac, T; Bencan, A; Malic, B; Kholkin, AL; Shur, VY
nationality	International
journal	JOURNAL OF APPLIED PHYSICS
keywords	LEAD-FREE PIEZOCERAMICS; THIN-FILMS; NIOBATE; PERMITTIVITY; CONSTANT; BATIO3; MODEL
abstract	The influence of domain walls on the macroscopic properties of ferroelectric materials is a well known phenomenon. Commonly, such "extrinsic" contributions to dielectric permittivity are discussed in terms of domain wall displacements under external electric field. In this work, we report on a possible contribution of charged domain walls to low frequency (10-10(6) Hz) dielectric permittivity in K1-xNaxNbO3 ferroelectric ceramics. It is shown that the effective dielectric response increases with increasing domain wall density. The effect has been attributed to the Maxwell-Wagner-Sillars relaxation. The obtained results may open up possibilities for domain wall engineering in various ferroelectric materials.
publisher	AMER INST PHYSICS
issn	0021-8979
isbn	1089-7550
year published	2017
volume	121
issue	7
digital object identifier (doi)	10.1063/1.4975341
web of science category	Physics, Applied
subject category	Physics
unique article identifier	WOS:000395283700010