Slow-muon study of quaternary solar-cell materials: Single layers and p-n junctions
authors Alberto, HV; Vilao, RC; Vieira, RBL; Gil, JM; Weidinger, A; Sousa, MG; Teixeira, JP; da Cunha, AF; Leitao, JP; Salome, PMP; Fernandes, PA; Torndahl, T; Prokscha, T; Suter, A; Salman, Z
nationality International
journal PHYSICAL REVIEW MATERIALS
keywords CHALCOPYRITE SEMICONDUCTORS; ELECTRONIC-PROPERTIES; HYDROGEN STATES; BUFFER LAYERS; CU(IN,GA)SE-2; CDS; EFFICIENCY; CUINSE2; FUTURE; FILMS
abstract Thin films and p-n junctions for solar cells based on the absorber materials Cu(In, Ga) Se-2 and Cu2ZnSnS4 were investigated as a function of depth using implanted low energy muons. The most significant result is a clear decrease of the formation probability of the Mu(+) state at the heterojunction interface as well as at the surface of the Cu(In, Ga)Se-2 film. This reduction is attributed to a reduced bonding reaction of the muon in the absorber defect layer at its surface. In addition, the activation energies for the conversion from a muon in an atomiclike configuration to a anion-bound position are determined from temperature-dependence measurements. It is concluded that the muon probe provides a measurement of the effective surface defect layer width, both at the heterojunctions and at the films. The CIGS surface defect layer is crucial for solar-cell electrical performance and additional information can be used for further optimizations of the surface.
publisher AMER PHYSICAL SOC
issn 2475-9953
year published 2018
volume 2
issue 2
digital object identifier (doi) 10.1103/PhysRevMaterials.2.025402
web of science category Materials Science, Multidisciplinary
subject category Materials Science
unique article identifier WOS:000424511700004
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