From porous to compact films by changing the onset conditions of HW-CVD process
authors Ferreira, I; Costa, MEV; Fortunato, E; Martins, R
nationality International
journal THIN SOLID FILMS
author keywords HW-CVD; doped microcrystalline silicon films; compactness
keywords CHEMICAL-VAPOR-DEPOSITION; THIN-FILM; SILICON
abstract Doped a/muc-Si:H films were produced in different starting deposition conditions by the hot wire chemical vapor deposition technique, In this paper, we show that by changing the initial onset deposition conditions of the process and maintaining the overall pressure, hydrogen dilution and filament temperature, it is possible to control the compactness of the films. As the films nucleation is the key parameter to produce compact films, we show that starting the process with hydrogen and progressively introducing the process gas enhances the compactness and improve the electrical properties of the films produced. (C) 2002 Elsevier Science B.V. All rights reserved.
publisher ELSEVIER SCIENCE SA
issn 0040-6090
year published 2003
volume 427
issue 1-2
beginning page 225
ending page 230
digital object identifier (doi) 10.1016/S0040-6090(02)01186-0
web of science category Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter
subject category Materials Science; Physics
unique article identifier WOS:000182573200044
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journal impact factor 2.03
5 year journal impact factor 1.884
category normalized journal impact factor percentile 42.934
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