Electrostatic mechanism of strong enhancement of light emitted by semiconductor quantum wells

authors	Llopis, A; Lin, J; Pereira, SMS; Trinidade, T; Martins, MA; Watson, IM; Krokhin, AA; Neogi, A
nationality	International
journal	PHYSICAL REVIEW B
keywords	EMISSION; SURFACE; PHOTOLUMINESCENCE; NANOCAVITIES; PLASMONICS
abstract	Currently, it is understood that the carrier recombination rate in semiconductors can be modified by metals due to pure electrodynamic interactions through surface plasmons. We propose here an electrostatic mechanism for carrier-metallic nanoparticle interaction comparable in effect to plasmonic interactions. Arising from Coulomb attraction of electrons and holes to their images in metal, this mechanism produces large carrier concentrations near metallic nanoparticles. Increased concentration results in increased quantum efficiency and enhances the rate of e-h recombination. This manifests as emission enhancement in InGaN quantum wells radiating in the near-UV region. The proposed fundamental mechanism provides a new perspective for improving the efficiency of broadband light emitters.
publisher	AMER PHYSICAL SOC
issn	1098-0121
year published	2013
volume	87
issue	20
digital object identifier (doi)	10.1103/PhysRevB.87.201304
web of science category	Physics, Condensed Matter
subject category	Physics
unique article identifier	WOS:000319730100001