Al-doped ZnO thin films by sol-gel method

authors	Musat, V; Teixeira, B; Fortunato, E; Monteiro, RCC; Vilarinho, P
nationality	International
journal	SURFACE & COATINGS TECHNOLOGY
author keywords	al-doped ZnO; thin films; sol-gel; electrical properties; optical properties
keywords	ZINC-OXIDE FILMS; ORIENTATION
abstract	Transparent and conductive high preferential c-axis oriented ZnO thin films doped with Al have been prepared by sol-gel method using zinc acetate and aluminium chloride as cations source, 2-methoxiethanol as solvent and monoethanolamine as sol stabilizer. Film deposition was performed by dip-coating technique at a withdrawal rate of 1.5 cm min(-1) on Corning 1737 glass substrate. The effect of dopant concentration, heating treatment and annealing in reducing atmosphere on the microstructure as well as on the electrical and optical properties of the thin films is discussed. The optical transmittance spectra of the films showed a very good transmittance, between 85 and 95%, within the visible wavelength region. The minimum resistivity of 1.3 X 10(-3) Omega cm was obtained for the film doped with 2 wt.% Al, preheated at 400 degreesC and post-heated at 600 degreesC, after annealing under a reduced atmosphere of forming gas. (C) 2003 Elsevier B.V. All rights reserved.
publisher	ELSEVIER SCIENCE SA
issn	0257-8972
year published	2004
volume	180
beginning page	659
ending page	662
digital object identifier (doi)	10.1016/j.surfcoat.2003.10.112
web of science category	Materials Science, Coatings & Films; Physics, Applied
subject category	Materials Science; Physics
unique article identifier	WOS:000220889900121