Polycrystalline silicon obtained by metal induced crystallization using different metals
authors Pereira, L; Aguas, H; Martins, RMS; Vilarinho, P; Fortunato, E; Martins, R
nationality International
journal THIN SOLID FILMS
author keywords polycrystalline silicon; metal induced crystallization; annealing
keywords AMORPHOUS-SILICON; SI FILMS
abstract The aim of this paper is to study the role of different metals (aluminium, molybdenum, nickel and titanium) in inducing crystallization in films produced by LPCVD at high and low temperature processes and to compare the structural, morphological, optical and electrical properties of the various films produced. This work envisages the use of the most suitable conditions that lead to the production of films for optoelectronic applications such as solar cells. (C) 2003 Elsevier B.V. All rights reserved.
publisher ELSEVIER SCIENCE SA
issn 0040-6090
year published 2004
volume 451
beginning page 334
ending page 339
digital object identifier (doi) 10.1016/j.tsf.2003.10.124
web of science category Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter
subject category Materials Science; Physics
unique article identifier WOS:000220510500072
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journal analysis (jcr 2019):
journal impact factor 2.03
5 year journal impact factor 1.884
category normalized journal impact factor percentile 42.934
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