Low-temperature dielectric response of NaTaO3 ceramics and films


In this work, NaTaO3 ceramics are prepared by conventional mixed oxide method and NaTaO3 films are deposited by RF magnetron sputtering on Si/SiO2/TiO2/Pt substrates. The dielectric response of the obtained NaTaO3 ceramics and films is analyzed as a function of frequency and temperature. Between 1 kHz and 1MHz, the dielectric permittivity of NaTaO3 ceramics is frequency independent and increases on cooling up to similar to 324, which is the highest value ever reported for NaTaO3 ceramics. In contrast, NaTaO3 films exhibit a dielectric relaxation between similar to 20 and 30K, following the Arrhenius law with activation energy similar to 51 meV and pre-exponential term similar to 10(-15) s and attributed to polaron hopping. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4714527]



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Tkach, A; Almeida, A; Moreira, JA; de la Cruz, JP; Romaguera-Barcelay, Y; Vilarinho, PM

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The authors acknowledge Portuguese Foundation for Science and Technology FCT (project PTDC/CTM/64805/2006). SEM/EDS characterization was supported by project REDE/1509/RME/2005. A. Tkach also acknowledges FCT for financial support (SFRH/BPD/34607/2007).

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