Surface pretreatments of silicon nitride for CVD diamond deposition
authors Belmonte, M; Silva, VA; Fernandes, AJ; Costa, F; Silva, R
nationality International
journal JOURNAL OF THE AMERICAN CERAMIC SOCIETY
keywords CHEMICAL-VAPOR-DEPOSITION; SUBSTRATE PRETREATMENTS; NUCLEATION DENSITY; ADHESION STRENGTH; TOOL MATERIALS; CUTTING TOOLS; COATINGS; GROWTH; FILMS; MPCVD
abstract The efficiency of different surface pretreatments (four standard chemical etchings and four diamond powder abrasive procedures) on silicon nitride (Si3N4) substrates for chemical vapor deposition (CVD) of diamond has been systematically investigated. Blank Si3N4 samples were polished with colloidal silica (similar to0.25 mum). Diamond nucleation and growth runs were conducted in a microwave plasma chemical vapor deposition apparatus for 10 min and 6 h, respectively. Superior results concerning nucleation density (N-d similar to 10(10) cm(-2) after 10 min), film uniformity, and grain size (below 2 mum after 6 h) were obtained for the mechanically microflawed samples, revealing that chemical etchings (hot and cold strong acids, molten base or CF4 plasma) are not crucial for good CVD diamond quality on Si3N4.
publisher AMER CERAMIC SOC
issn 0002-7820
year published 2003
volume 86
issue 5
beginning page 749
ending page 754
web of science category Materials Science, Ceramics
subject category Materials Science
unique article identifier WOS:000182942700001
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journal analysis (jcr 2019):
journal impact factor 3.502
5 year journal impact factor 3.475
category normalized journal impact factor percentile 91.071
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