SiC polytypes process affected by Ge predeposition on Si(111) substrates

resumo

Structural and optical measurements were performed on silicon carbide (SiC) samples containing several polytypes. The SiC samples investigated were grown on (111) Si substrates by solid source molecular beam epitaxy (SSMBE). Several quantities of Ge were predeposited before the growth procedure. The influence of Ge on the Sic polytypes formation was studied by X-Ray, FIR and mu-Raman characterizations methods. The spectra of the samples with less than one Ge monolayer exhibit a mixture of 2H, 15R and 3C-SiC polytypes. This mixture is due to the mismatch between the heterostructure layers. We propose that the Ge predeposition in the heterostructure can be used to Stabilize and unify the polytypes formation. (C) 2008 Elsevier Ltd. All rights reserved.

palavras-chave

RAMAN-SCATTERING; HETEROEPITAXIAL GROWTH; OPTICAL-PROPERTIES; FILMS; LUMINESCENCE; PECVD; MODES

categoria

Physics

autores

Nader, R; Moussaed, E; Kazan, M; Pezoldt, J; Masri, P

Grupos

agradecimentos

Richard Nader would like to thank the

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