From porous to compact films by changing the onset conditions of HW-CVD process

authors	Ferreira, I; Costa, MEV; Fortunato, E; Martins, R
nationality	International
journal	THIN SOLID FILMS
author keywords	HW-CVD; doped microcrystalline silicon films; compactness
keywords	CHEMICAL-VAPOR-DEPOSITION; THIN-FILM; SILICON
abstract	Doped a/muc-Si:H films were produced in different starting deposition conditions by the hot wire chemical vapor deposition technique, In this paper, we show that by changing the initial onset deposition conditions of the process and maintaining the overall pressure, hydrogen dilution and filament temperature, it is possible to control the compactness of the films. As the films nucleation is the key parameter to produce compact films, we show that starting the process with hydrogen and progressively introducing the process gas enhances the compactness and improve the electrical properties of the films produced. (C) 2002 Elsevier Science B.V. All rights reserved.
publisher	ELSEVIER SCIENCE SA
issn	0040-6090
year published	2003
volume	427
issue	1-2
beginning page	225
ending page	230
digital object identifier (doi)	10.1016/S0040-6090(02)01186-0
web of science category	Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter
subject category	Materials Science; Physics
unique article identifier	WOS:000182573200044