Electrical properties of SrBi2Ta2O9 single crystals grown by self-flux solution
authors Amorin, H; Costa, MEV; Kholkin, AL; Baptista, JL
nationality International
journal JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
author keywords bi-layered ferroelectrics; ferroelectric properties; self-flux growth; SrBi2Ta2O9 single-crystals
keywords THIN-FILMS; FERROELECTRIC CAPACITORS; FATIGUE; BI2SRTA2O9
abstract High-quality SrBi2Ta2O9 single crystals were grown by a self-flux solution method using Bi2O3 added with B2O3 flux. Chemical composition corresponded to the formula SrxBiyTa2O9 where x = 1.03 +/- 0.05 and y = 1.87 +/- 0.08. Transparent SBT crystals obtained by slow cooling (2 degreesC/h) of the melt from 1350 degreesC to 1100 degreesC, exhibit platelet morphology with typical sizes of 5 x 3 x 0.05 mm(3) dimensions with a dominant (001) orientation of a major face. Ferroelectric hysteresis and dielectric properties are measured perpendicularly to the major face of the crystals. Anisotropy, crystalline orientation, growth mechanism, and their influence on electrical properties are discussed. (C) 2003 Elsevier Ltd. All rights reserved.
publisher ELSEVIER SCI LTD
issn 0955-2219
year published 2004
volume 24
issue 6
beginning page 1535
ending page 1539
digital object identifier (doi) 10.1016/S0955-2219(03)00556-9
web of science category Materials Science, Ceramics
subject category Materials Science
unique article identifier WOS:000189247800127
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