Electrical properties of SrBi2Ta2O9 single crystals grown by self-flux solution

authors	Amorin, H; Costa, MEV; Kholkin, AL; Baptista, JL
nationality	International
journal	JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
author keywords	bi-layered ferroelectrics; ferroelectric properties; self-flux growth; SrBi2Ta2O9 single-crystals
keywords	THIN-FILMS; FERROELECTRIC CAPACITORS; FATIGUE; BI2SRTA2O9
abstract	High-quality SrBi2Ta2O9 single crystals were grown by a self-flux solution method using Bi2O3 added with B2O3 flux. Chemical composition corresponded to the formula SrxBiyTa2O9 where x = 1.03 +/- 0.05 and y = 1.87 +/- 0.08. Transparent SBT crystals obtained by slow cooling (2 degreesC/h) of the melt from 1350 degreesC to 1100 degreesC, exhibit platelet morphology with typical sizes of 5 x 3 x 0.05 mm(3) dimensions with a dominant (001) orientation of a major face. Ferroelectric hysteresis and dielectric properties are measured perpendicularly to the major face of the crystals. Anisotropy, crystalline orientation, growth mechanism, and their influence on electrical properties are discussed. (C) 2003 Elsevier Ltd. All rights reserved.
publisher	ELSEVIER SCI LTD
issn	0955-2219
year published	2004
volume	24
issue	6
beginning page	1535
ending page	1539
digital object identifier (doi)	10.1016/S0955-2219(03)00556-9
web of science category	Materials Science, Ceramics
subject category	Materials Science
unique article identifier	WOS:000189247800127