Influence of hydrogen gas dilution on the properties of silicon-doped thin films prepared by the hot-wire plasma-assisted technique
authors Ferreira, I; Vilarinho, P; Fernandes, F; Fortunato, E; Martins, R
editors Vieira, T
nationality International
journal ADVANCED MATERIALS FORUM I
author keywords doped silicon thin films; hot-wire plasma-assisted technique; hydrogen dilution
abstract P- and n-type silicon thin films have been produced using a new hot wire plasma assisted deposition process that combines the conventional plasma enhanced chemical vapor deposition and the hot wire techniques. The films were produced in the presence of different hydrogen gas flow and their optoelectronic, structural and compositional properties have been studied. The optimized optoelectronic results achieved for n-type Si:H films are conductivity at room temperature of 9.4(Omegacm)(-1) and optical band gap of 2eV while for p-type SiC:H films these values are 1x10(-2)(Omegacm)(-1) and 1.6 eV, respectively. The films exhibit the required optoelectronic characteristics and compactness for device applications such as solar cells.
publisher TRANS TECH PUBLICATIONS LTD
issn 1013-9826
isbn 0-87849-905-9
year published 2002
volume 230-2
beginning page 591
ending page 594
web of science category Materials Science, Ceramics; Materials Science, Composites
subject category Materials Science
unique article identifier WOS:000179553200137
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