Influence of hydrogen gas dilution on the properties of silicon-doped thin films prepared by the hot-wire plasma-assisted technique

authors	Ferreira, I; Vilarinho, P; Fernandes, F; Fortunato, E; Martins, R
editors	Vieira, T
nationality	International
journal	ADVANCED MATERIALS FORUM I
author keywords	doped silicon thin films; hot-wire plasma-assisted technique; hydrogen dilution
abstract	P- and n-type silicon thin films have been produced using a new hot wire plasma assisted deposition process that combines the conventional plasma enhanced chemical vapor deposition and the hot wire techniques. The films were produced in the presence of different hydrogen gas flow and their optoelectronic, structural and compositional properties have been studied. The optimized optoelectronic results achieved for n-type Si:H films are conductivity at room temperature of 9.4(Omegacm)(-1) and optical band gap of 2eV while for p-type SiC:H films these values are 1x10(-2)(Omegacm)(-1) and 1.6 eV, respectively. The films exhibit the required optoelectronic characteristics and compactness for device applications such as solar cells.
publisher	TRANS TECH PUBLICATIONS LTD
issn	1013-9826
isbn	0-87849-905-9
year published	2002
volume	230-2
beginning page	591
ending page	594
web of science category	Materials Science, Ceramics; Materials Science, Composites
subject category	Materials Science
unique article identifier	WOS:000179553200137