Layered growth of Ti2AlC and Ti3AlC2 in combustion synthesis

resumo

In Ti-Al-C system two ternary carbides of Ti2AlC and Ti3AlC2 were prepared by combustion synthesis. Laminated grain morphology and a terraced structure consisting of several parallel laminated layers were observed. On the basis of SEM and TEM results, a layered growth mechanism was proposed to describe the formation of the terraced structure. In this mechanism, the ternary carbide grains will undergo a preferential growth i.e. each layer grows fast and expands quickly in the basal plane and all the layers are successively stacked along the normal direction identical to the c-axis in the hexagonal structure. This preferential growth characterized by the terraced structure was widely observed in this study and hence may be a common behavior during the growth of Ti2AlC and Ti3AlC2 crystals in combustion synthesis. (c) 2006 Elsevier B.V. All rights reserved.

palavras-chave

HIGH-TEMPERATURE SYNTHESIS; TI3SIC2; CERAMICS; SYSTEM

categoria

Materials Science; Physics

autores

Liu, GH; Chen, KX; Zhou, HP; Guo, JM; Ren, KG; Ferreira, JMF

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