resumo
80%Pb(Zn1/3Nb2/3) O-3-20%PbTiO3 (PZN-PT) thin films have been prepared on Pt/Ti/SiO2/Si substrates using a modified sol-gel method. In our method, niobium pentaoxide is used as a substitution instead of niobium ethoxide which is moisture-sensitivity and much more expensive. Microstructure and electrical properties of PZN-PT thin films have been investigated. X-ray diffraction analysis shows that proper annealing temperature of PZN-PT thin films is 600 degrees C. The PZN-PT thin films annealed at 600 degrees C are polycrystalline with (111)-preferential orientations. Field-emissiom scanning electron microscope analysis revealed PZN-PT thin films possess well-defined and crack-free microstructure. The thickness of thin films is 290 nm. The Pt/PZN-PT/Pt capacitors have been fabricated and it presents ferroelectric nature. The remanent polarization (Pr), spontaneous polarization (Ps), and the coercive electric field (Ec) are 8.71 mu C/cm(2), 43.06 mu C/cm(2), and 109 kV/cm at 1 MHz, respectively. The dielectric constant (epsilon(r)) and the dissipation factor (tan delta) are about 500.3 and 0.1 at 1 kHz, respectively.
palavras-chave
SINGLE-CRYSTALS; PIEZOELECTRIC PROPERTIES; PHOTOLUMINESCENCE BEHAVIOR; RELAXOR FERROELECTRICS; ELECTRICAL-PROPERTIES; BRIDGMAN METHOD; TITANATE FILMS; GROWTH; PHASE; ORIENTATION
categoria
Materials Science
autores
Li, CQ; Liu, AY; Shi, JQ; Ruan, YF; Huang, L; Shi, WZ; Meng, XJ; Sun, JL; Chu, JH; Zhang, XD
Grupos
agradecimentos
This work is supported by National Natural Science Foundation of China (Grant No. 61007055, 60221502 and 11004134), Science and Technology Commission of Shanghai Municipal (No. 10DJ1400202 and 09520501000), Shanghai Municipal Education Commission (No. 12ZZ133), Innovative Group Project of Shanghai Normal University (No. DXL902), and