Oxygen Diffusion Barrier Applied To High-k Thin Films Deposition

resumo

The effect of a thin metallic interlayer deposited on Si substrate prior the sputtering of HfO2 films was investigated. It was shown that the metallic interlayer acts as an oxygen barrier during the HfO2 deposition. After annealing, the metal diffuses into the HfO2 film and prevents the formation of a low-kappa layer at the high-kappa/Si interface. However, in order to fully investigate the improvement in the interfacial and electrical properties, the thickness of the metallic interlayer needs to be adapted to the thickness of the HfO2 film.

palavras-chave

GATE DIELECTRICS; OXIDES; SILICON; SI

categoria

Electrochemistry; Engineering; Materials Science

autores

Rauwel, E; Rauwel, P; Ducroquet, F; Matko, I; Lourenco, A

nossos autores

agradecimentos

Financial support from Marie Curie (PERG05-GA-2009-249243) and FCT grant SFRH/BPD/45136/2008 and the Norwegian research council is acknowledged.

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