Minority anion substitution by Ni in ZnO


We report on the lattice location of implanted Ni in ZnO using the beta(-) emission channeling technique. In addition to the majority substituting for the cation (Zn), a significant fraction of the Ni atoms occupy anion (O) sites. Since Ni is chemically more similar to Zn than it is to O, the observed O substitution is rather puzzling. We discuss these findings with respect to the general understanding of lattice location of dopants in compound semiconductors. In particular, we discuss potential implications on the magnetic behavior of transition metal doped dilute magnetic semiconductors. (C) 2013 AIP Publishing LLC.



subject category



Pereira, LMC; Wahl, U; Correia, JG; Amorim, LM; Silva, DJ; Bosne, E; Decoster, S; da Silva, MR; Temst, K; Vantomme, A

our authors


This work was supported by the Portuguese Foundation for Science and Technology (CERN/FP/123585/2011 and SFRH/BD/35761/2007), the European Union Seventh Framework through ENSAR (European Nuclear Science and Applications Research, Contract No. 262010) and SPIRIT (Support of Public and Industrial Research Using Ion Beam Technology, Contract No. 227012), the Fund for Scientific Research-Flanders (FWO), and the Concerted Action of the KU Leuven (GOA/2009/006 and GOA/14/007).

Share this project:

Related Publications

We use cookies for marketing activities and to offer you a better experience. By clicking “Accept Cookies” you agree with our cookie policy. Read about how we use cookies by clicking "Privacy and Cookie Policy".