Correlation between local atomic structure and ultraviolet luminescence of AlGdN thin films


The present study reports on the correlation between the local atomic structure and cathodoluminescent properties of Al1-xGdxN thin films grown by reactive rf magnetron sputtering at ultra-high vacuum conditions. Those thin films were characterised using X-ray absorption fine structure (XAFS) and cathodoluminescence (CL). From the CL measurements, we have observed a narrow intense ultraviolet emission at 318 nm which is originated from the intra-orbital f-f transition in Gd3+ ions. In order to understand the local atomic structure around the Al1-xGdxN (x=0.1 to 6.0 mol%) thin film, XAFS measurements have been carried out. Analysis of the local atomic structural results showed that both the large distance among Gd atoms and nitrogen vacancies in Al1-xGdxN lattice significantly contribute to the richness in the ultraviolet emission intensity.



subject category

Materials Science; Physics


Ichii, K; Kitayama, S; Iwahashi, S; Nakamura, J; Reddithota, VS; Kita, T; Chigi, Y; Nishimoto, T; Tanaka, H; Kobayashi, M; Ishihara, T; Izumi, H

our authors

Share this project:

Related Publications

We use cookies for marketing activities and to offer you a better experience. By clicking “Accept Cookies” you agree with our cookie policy. Read about how we use cookies by clicking "Privacy and Cookie Policy".