Correlation between local atomic structure and ultraviolet luminescence of AlGdN thin films
authors Ichii, K; Kitayama, S; Iwahashi, S; Nakamura, J; Reddithota, VS; Kita, T; Chigi, Y; Nishimoto, T; Tanaka, H; Kobayashi, M; Ishihara, T; Izumi, H
journal 15TH INTERNATIONAL CONFERENCE ON THIN FILMS (ICTF-15)
keywords RARE-EARTH IONS; FLUORESCENCE EXAFS; ALN; INTENSITIES; NM
abstract The present study reports on the correlation between the local atomic structure and cathodoluminescent properties of Al1-xGdxN thin films grown by reactive rf magnetron sputtering at ultra-high vacuum conditions. Those thin films were characterised using X-ray absorption fine structure (XAFS) and cathodoluminescence (CL). From the CL measurements, we have observed a narrow intense ultraviolet emission at 318 nm which is originated from the intra-orbital f-f transition in Gd3+ ions. In order to understand the local atomic structure around the Al1-xGdxN (x=0.1 to 6.0 mol%) thin film, XAFS measurements have been carried out. Analysis of the local atomic structural results showed that both the large distance among Gd atoms and nitrogen vacancies in Al1-xGdxN lattice significantly contribute to the richness in the ultraviolet emission intensity.
publisher IOP PUBLISHING LTD
issn 1742-6588
year published 2013
volume 417
digital object identifier (doi) 10.1088/1742-6596/417/1/012049
web of science category Materials Science, Coatings & Films; Physics, Multidisciplinary
subject category Materials Science; Physics
unique article identifier WOS:000317122000049
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