Lattice location study of low-fluence ion-implanted In-124 in 3C-SiC

authors	Costa, ARG; Wahl, U; Correia, JG; David-Bosne, E; Augustyns, V; Lima, TAL; Silva, DJ; da Silva, MR; Bharuth-Ram, K; Pereira, LMC
nationality	International
journal	JOURNAL OF APPLIED PHYSICS
keywords	SILICON-CARBIDE; INDUCED DEFECTS; DIAMOND; SITE; IDENTIFICATION; COMPLEXES; CADMIUM
abstract	We report on the lattice location of low-fluence ion implanted In-124 in single-crystalline 3C-SiC by means of the emission channeling technique using radioactive isotopes produced at the ISOLDE/CERN facility. In the sample implanted at room temperature to a fluence of 4x10(12)cm(-2), 60(9)% of the In atoms were found slightly displaced (0.12-0.20 angstrom) from substitutional Si sites, with the remainder occupying sites of low crystallographic symmetry, the so-called random sites. For 800 degrees C implantation, the substitutional In fraction increased to 72(8)% and the displacements from ideal substitutional Si sites were reduced to those expected for the lattice vibrations. These results, in terms of lattice location and disorder, are compared to those on In implanted group IV semiconductors silicon and diamond.
publisher	AMER INST PHYSICS
issn	0021-8979
isbn	1089-7550
year published	2019
volume	125
issue	21
digital object identifier (doi)	10.1063/1.5097032
web of science category	Physics, Applied
subject category	Physics
unique article identifier	WOS:000470721900059