abstract
We report on the lattice location of low-fluence ion implanted In-124 in single-crystalline 3C-SiC by means of the emission channeling technique using radioactive isotopes produced at the ISOLDE/CERN facility. In the sample implanted at room temperature to a fluence of 4x10(12)cm(-2), 60(9)% of the In atoms were found slightly displaced (0.12-0.20 angstrom) from substitutional Si sites, with the remainder occupying sites of low crystallographic symmetry, the so-called random sites. For 800 degrees C implantation, the substitutional In fraction increased to 72(8)% and the displacements from ideal substitutional Si sites were reduced to those expected for the lattice vibrations. These results, in terms of lattice location and disorder, are compared to those on In implanted group IV semiconductors silicon and diamond.
keywords
SILICON-CARBIDE; INDUCED DEFECTS; DIAMOND; SITE; IDENTIFICATION; COMPLEXES; CADMIUM
subject category
Physics
authors
Costa, ARG; Wahl, U; Correia, JG; David-Bosne, E; Augustyns, V; Lima, TAL; Silva, DJ; da Silva, MR; Bharuth-Ram, K; Pereira, LMC
our authors
Daniel José da Silva
Post-Doc Fellowship
Manuel Castro Ribeiro da Silva
Associate Professoracknowledgements
We acknowledge the beam time provided by the ISOLDE collaboration. This work was funded by the Portuguese Foundation for Science and Technology (FCT) through project CERN-FIS-PAR-0005-2017 and the strategic project UID/Multi/04349/2013, by the FWO Vlaanderen and the KU Leuven (No. STRT/14/002). A. R. G. Costa is thankful for the FCT grant SFRH/BD/86386/2012. K.B.R. acknowledges support from the South African Department of Science and Technology through the SA-CERN Program. The ISOLDE beam times were supported by the European Commission through the Horizon 2020 program (Grant No. 654002 ENSAR2).