authors |
Costa, ARG; Wahl, U; Correia, JG; David-Bosne, E; Augustyns, V; Lima, TAL; Silva, DJ; da Silva, MR; Bharuth-Ram, K; Pereira, LMC |
nationality |
International |
journal |
JOURNAL OF APPLIED PHYSICS |
keywords |
SILICON-CARBIDE; INDUCED DEFECTS; DIAMOND; SITE; IDENTIFICATION; COMPLEXES; CADMIUM |
abstract |
We report on the lattice location of low-fluence ion implanted In-124 in single-crystalline 3C-SiC by means of the emission channeling technique using radioactive isotopes produced at the ISOLDE/CERN facility. In the sample implanted at room temperature to a fluence of 4x10(12)cm(-2), 60(9)% of the In atoms were found slightly displaced (0.12-0.20 angstrom) from substitutional Si sites, with the remainder occupying sites of low crystallographic symmetry, the so-called random sites. For 800 degrees C implantation, the substitutional In fraction increased to 72(8)% and the displacements from ideal substitutional Si sites were reduced to those expected for the lattice vibrations. These results, in terms of lattice location and disorder, are compared to those on In implanted group IV semiconductors silicon and diamond. |
publisher |
AMER INST PHYSICS |
issn |
0021-8979 |
isbn |
1089-7550 |
year published |
2019 |
volume |
125 |
issue |
21 |
digital object identifier (doi) |
10.1063/1.5097032 |
web of science category |
Physics, Applied |
subject category |
Physics |
unique article identifier |
WOS:000470721900059
|
ciceco authors
impact metrics
journal analysis (jcr 2019):
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journal impact factor |
2.286 |
5 year journal impact factor |
2.138 |
category normalized journal impact factor percentile |
54.87 |
dimensions (citation analysis):
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altmetrics (social interaction):
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