Lattice location study of low-fluence ion-implanted In-124 in 3C-SiC
authors Costa, ARG; Wahl, U; Correia, JG; David-Bosne, E; Augustyns, V; Lima, TAL; Silva, DJ; da Silva, MR; Bharuth-Ram, K; Pereira, LMC
nationality International
journal JOURNAL OF APPLIED PHYSICS
keywords SILICON-CARBIDE; INDUCED DEFECTS; DIAMOND; SITE; IDENTIFICATION; COMPLEXES; CADMIUM
abstract We report on the lattice location of low-fluence ion implanted In-124 in single-crystalline 3C-SiC by means of the emission channeling technique using radioactive isotopes produced at the ISOLDE/CERN facility. In the sample implanted at room temperature to a fluence of 4x10(12)cm(-2), 60(9)% of the In atoms were found slightly displaced (0.12-0.20 angstrom) from substitutional Si sites, with the remainder occupying sites of low crystallographic symmetry, the so-called random sites. For 800 degrees C implantation, the substitutional In fraction increased to 72(8)% and the displacements from ideal substitutional Si sites were reduced to those expected for the lattice vibrations. These results, in terms of lattice location and disorder, are compared to those on In implanted group IV semiconductors silicon and diamond.
publisher AMER INST PHYSICS
issn 0021-8979
isbn 1089-7550
year published 2019
volume 125
issue 21
digital object identifier (doi) 10.1063/1.5097032
web of science category Physics, Applied
subject category Physics
unique article identifier WOS:000470721900059
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journal analysis (jcr 2019):
journal impact factor 2.286
5 year journal impact factor 2.138
category normalized journal impact factor percentile 54.87
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