RF Phase Shifters Design Based on Barium Strontium Titanate Thick and Thin Films

abstract

In this paper, microwave characterizations and phase-shifting applications of electrophoretically deposited thick films and sol-gel derived thin films of Barium Strontium Titanate (BST) are presented. Capacitors fabricated using Ba0:7Sr0:3TiO3 films prepared by electrophoretic deposition (EPD) on platinum foils and sol-gel technique on platinized Si and SiO2 demonstrate a maximum tunability of 49%, 29%, and 33%, respectively. The nominal capacitance and the microwave loss tangent are obtained from 500 MHz to 6 GHz. The three different BST films are designed to fabricate phase shifters. The total phase shift divided by the maximum insertion is 10 deg./dB higher in phase shifters developed with thin films on SiO2 than in thick films. The linearity of the RF phase shifters using an input power from -20 dBm to 4 dBm is also analyzed. The linearity of the RF phase shifters using an input power from -20 dBm to 4 dBm is also analyzed. For the first time, the two methods of film deposition are directly compared in microwave applications.

authors

P. Bouça, R. Pinho, A. Wlodarkiewicz, A. Tkach, J.N. Matos, P.M. Vilarinho, N. Borges de Carvalho

our authors

Share this project:

Related Publications

We use cookies for marketing activities and to offer you a better experience. By clicking “Accept Cookies” you agree with our cookie policy. Read about how we use cookies by clicking "Privacy and Cookie Policy".