Residual stress minimum in nanocrystalline diamond films

abstract

Nanocrystalline diamond films have been deposited on silicon nitride substrates by hot filament chemical vapor deposition. Gas mixtures of CH4-H-2-Ar were used with variation of the Ar/H-2 ratio in order to study the influence of the Ar content on the formation of nondiamond phases at the grain boundaries and thus in the film residual stress assessed by x-ray diffraction techniques. By varying this ratio it is possible to optimize conditions, decreasing the film's residual stress to a minimum of 0.09 GPa. (c) 2006 American Institute of Physics.

keywords

CHEMICAL-VAPOR-DEPOSITION; X-RAY-DIFFRACTION; AMORPHOUS-CARBON; POLYCRYSTALLINE; SYSTEM; GROWTH

subject category

Physics

authors

Vila, M; Amaral, M; Oliveira, FJ; Silva, RF; Fernandes, AJS; Soares, MR

our authors

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