authors |
Peres, M; Cruz, A; Pereira, S; Correia, MR; Soares, MJ; Neves, A; Carmo, MC; Monteiro, T; Pereira, AS; Martins, MA; Trindade, T; Alves, E; Nobre, SS; Ferreira, RAS |
nationality |
International |
journal |
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING |
keywords |
IMPLANTED GAN; QUANTUM DOTS; THIN-FILMS; PHOTOLUMINESCENCE; SAMPLES; GREEN; LUMINESCENCE |
abstract |
Synthetic ZnO nanocrystals have been intentionally doped with Eu3+ ions. Structural analysis performed on the nanocrystals showed wurtzite-ZnO as the only phase present in the samples. Photoluminescence in emission and excitation modes allows the assignment of the intra-4f(6) transitions for the Eu3+ ions. From the analysis of the optical data we are able to demonstrate that multiple Eu-related optical centres are present in the studied samples. Oxygen vacancies are likely candidates to be responsible for the ion accommodation in the ZnO lattice and from the photoluminescence excitation data we tentatively assign a trap level at similar to 200 meV below the conduction band to this intrinsic defect. |
publisher |
SPRINGER |
issn |
0947-8396 |
year published |
2007 |
volume |
88 |
issue |
1 |
beginning page |
129 |
ending page |
133 |
digital object identifier (doi) |
10.1007/s00339-007-3941-9 |
web of science category |
Materials Science, Multidisciplinary; Physics, Applied |
subject category |
Materials Science; Physics |
unique article identifier |
WOS:000246561200024
|