Titanium tellurite thick films prepared by electrophoretic deposition and their dielectric properties

abstract

TiTe3O8 ceramics and films can be well sintered below 800 degrees C and consequently have the potential to be used for low-temperature co-fired ceramics. TiTe3O8 thick films were fabricated by electrophoretic deposition on platinized Si substrates using TiTe3O8 powders synthesized by a conventional solid-state reaction. The permittivity of TiTe3O8 films is similar to 54, with loss tan 6 of similar to 0.009, measured at 100 kHz. The temperature coefficients of permittivity of TiTe3O8 films and ceramics between 35 and 200 degrees C are +78 and -100 ppm degrees C-1, respectively. (C) 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

keywords

BI2O3-TIO2-TEO2 SYSTEM; OXYGEN ATMOSPHERE; PHASE-TRANSITION; CERAMICS; SRTEO3

subject category

Science & Technology - Other Topics; Materials Science; Metallurgy & Metallurgical Engineering

authors

Su, X; Wu, AY; Vilarinho, PM

our authors

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